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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF1820-70 UHF power LDMOS transistor
Product specification Supersedes data of 2001 Feb 12 2003 Feb 10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES * Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: - Output power = 65 W (PEP) - Gain = 12 dB - Efficiency = 32% - dim = -26 dBc * Easy power control * Excellent ruggedness * High power gain * Excellent thermal stability * Designed for broadband operation (1800 to 2000 MHz) * Internally matched for ease of use.
Top view 2
handbook, halfpage
BLF1820-70
PINNING PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
1
3
MBK394
APPLICATIONS * RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range. DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2000; f2 = 2000.1 VDS (V) 26 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PL (W) 65 (PEP) Gp (dB) >11 D (%) >30 dim (dBc) -25
Fig.1 Simplified outline SOT502A.
2003 Feb 10
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Tstg Tj drain-source voltage gate-source voltage DC drain current storage temperature junction temperature PARAMETER - - - -65 - MIN.
BLF1820-70
MAX. 65 15 9 +150 200 V V A
UNIT
C C
THERMAL CHARACTERISTICS SYMBOL Rth j-h Note 1. Determined under specified RF operating conditions. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Crss PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance CONDITIONS VGS = 0; ID = 1.4 mA VDS = 10 V; ID = 140 mA VGS = 0; VDS = 26 V VGS = VGSth + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 VDS = 10 V; ID = 5 A VGS = VGSth + 9 V; ID = 5 A VGS = 0; VDS = 26 V; f = 1 MHz MIN. 65 4.4 - 18 - - - - TYP. - - - - - 4.2 0.15 3.4 MAX. - 5.5 10 - 25 - - - UNIT V V A A nA S pF PARAMETER thermal resistance from junction to heatsink CONDITIONS Th = 25 C, note 1 VALUE 1.15 UNIT K/W
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 C; Rth j-h = 1.15 K/W, unless otherwise specified. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2000; f2 = 2000.1 VDS (V) 26 IDQ (mA) 500 PL (W) 65 (PEP) Gp (dB) >11 D (%) >30 dim (dBc) -25
Ruggedness in class-AB operation The BLF1820-70 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; IDQ = 500 mA; PL = 65 W; f = 2000 MHz.
2003 Feb 10
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-70
handbook, halfpage
15
MLD526
60 Gp D (%) 40
handbook, halfpage
0
MLD527
Gp (dB) 10
dim (dBc) -20
-40 D 5 20 -60
d3 d5 d7
0 0 20 40
0 60 80 PL (PEP) (W)
-80
0
20
40
80 60 PL (PEP) (W)
f1 = 2000 MHz; f2 = 2000.1 MHz; VDS = 26 V; IDQ = 500 mA; Th 25 C.
f1 = 2000 MHz; f2 = 2000.1 MHz; VDS = 26 V; IDQ = 500 mA; Th 25 C.
Fig.2
Power gain and drain efficiency as a function of peak envelope load power; typical values.
Fig.3
Intermodulation distortion as a function of peak envelope load power; typical values.
handbook, halfpage
15
MLD528
60 D (%)
(2)
handbook, halfpage
0
MLD529
Gp (dB)
(3)
d3 (dBc) -20
(1)
10
(1) (3) (2)
40
(1) (2) (3)
-40
5
20 -60
0 0 20 40 60 PL (W)
0 80
-80
0
20
40
80 60 PL (PEP) (W)
f1 = 2000 MHz; f2 = 2000.1 MHz; VDS = 26 V; Th 25 C. (1) IDQ = 400 mA. (2) IDQ = 500 mA. (3) IDQ = 600 mA.
VDS = 26 V; Th 25 C; f1 = 2000 MHz; f2 = 2000.1 MHz. (1) IDQ = 400 mA. (2) IDQ = 500 mA. (3) IDQ = 600 mA.
Fig.4
Power gain and drain efficiency as a function of the peak envelope load power; typical values.
Fig.5
Third order intermodulation distortion as a function of peak envelope load power; typical values.
2003 Feb 10
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-70
handbook, halfpage
6
MLD530
zi () 4
handbook, halfpage
4
MLD531
xi
ZL () 2
RL
2 ri 0
0
-2 ZL
-2
-4
-4 1.7
1.8
1.9
2
2.1
2.2 f (GHz)
-6 1.7
1.8
1.9
2
2.1
2.2 f (GHz)
VDS = 26 V; IDQ = 500 mA; PL = 65 W; Th 25 C.
VDS = 26 V; IDQ = 500 mA; PL = 65 W; Th 25 C.
Fig.6
Input impedance as a function of frequency (series components); typical values.
Fig.7
Load impedance as a function of frequency (series components); typical values.
handbook, full pagewidth
F1 R1 C6 Vgate C5 C11 C14 C12 C16 C17 C15 C13 R2 Vdd
L4 C4 L6 L2 L10 L11
L13 C10
L15
L17
L8 input 50 C3 L20 L1 L3 L5 C2 L7 C1 L12 L14 L16 C7 L18 C8
MGS954
C9 L19
output 50
L9
Fig.8 Class-AB test circuit at f = 2 GHz. 2003 Feb 10 5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
List of components (see Figs. 8 and 9) COMPONENT C3, C9 C4, C10 C5, C12 and C16 C6, C11 and C15 C13 and C17 C14 F1 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 and L11 L12 L13 L14 L15 L16 L17 L18 L19 L20 R1 and R2 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. metal film resistor stripline; note 3 DESCRIPTION VALUE 0.6 to 4.5 pF DIMENSIONS
BLF1820-70
CATALOGUE NO.
C1, C2, C7 and C8 Tekelec variable capacitor; type 37271
multilayer ceramic chip capacitor; note 1 12 pF multilayer ceramic chip capacitor; note 2 12 pF electrolytic capacitor electrolytic capacitor multilayer ceramic chip capacitor Ferroxcube chip-bead 8DS3/3/8/9-4S2 50 10.8 50 6 50 9 50 18.5 24.4 5.1 25.4 5.7 25.4 10 50 11.8 50 50 50 10 , 0.6 W 2.9 x 2.4 mm 4 x 16.3 mm 3.7 x 2.4 mm 2 x 30.8 mm 3.6 x 2.4 mm 3 x 19.9 mm 7.8 x 2.4 mm 4 x 8.8 mm 5 x 6.3 mm 7 x 37 mm 10.1 x 6 mm 2.4 x 32.8 mm 6.4 x 6 mm 3.5 x 17.8 mm 10.8 x 2.4 mm 3 x 14.9 mm 2.3 x 2.4 mm 3 x 2.4 mm 5.5 x 2.4 mm 2322 156 11009 4.5 F; 50 V 100 F; 63 V 100 nF 2222 037 58101 2222 581 16641 4330 030 36301 multilayer ceramic chip capacitor; note 1 1 nF
3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (r = 2.2); thickness 0.79 mm.
2003 Feb 10
6
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-70
handbook, full pagewidth
50
50
95
INPUT
OUTPUT
PH990118
VGS VDD
PH990117
C6 R1
C17 C5 C16 C11 C4 C10
R2 F1 C13 C15 C14
C12
C3 C2 C1 C7 C8
C9
INPUT
OUTPUT
PH990118
PH990117
MGU319
Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (r = 2.2), thickness 0.79 mm. The other side is unetched and serves as a ground plane.
Fig.9 Component layout for 2 GHz class-AB test circuit.
2003 Feb 10
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
BLF1820-70
SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
2003 Feb 10
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
BLF1820-70
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.the DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Feb 10
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
NOTES
BLF1820-70
2003 Feb 10
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
NOTES
BLF1820-70
2003 Feb 10
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/02/pp12
Date of release: 2003
Feb 10
Document order number:
9397 750 10915

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